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| VBO 30 Single Phase Rectifier Bridge IdAVM = 35 A VRRM = 1200-1800 V VRSM V 800 1200 1400 1600 1800 VRRM V 800 1200 1400 1600 1800 Type + + - VBO VBO VBO VBO VBO 30-08NO7 30-12NO7 30-14NO7 30-16NO7 30-18NO7* ~ ~ - ~ ~ * delivery time on request Symbol IdAVM IFSM Conditions TC = 85C, module TVJ = 45C; VR = 0 TVJ = TVJM VR = 0 I2t TVJ = 45C VR = 0 TVJ = TVJM VR = 0 TVJ TVJM Tstg VISOL Md 50/60 Hz, RMS IISOL 1 mA t = 1 min t=1s 1.5 13 1.5 13 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine Maximum Ratings 35 400 440 360 400 800 810 650 670 -40...+150 150 -40...+150 2500 3000 15% 15% 15% 15% 135 A A A A A A2s A2s As A2s C C C V~ V~ Nm lb.in. Nm lb.in. g 2 Features * Package with screw terminals * Isolation voltage 3000 V~ * Planar passivated chips * Blocking voltage up to 1800 V * Low forward voltage drop * UL registered E 72873 Applications * Supplies for DC power equipment * Input rectifiers for PWM inverter * Battery DC power supplies * Field supply for DC motors Advantages * Easy to mount with two screws * Space and weight savings * Improved temperature and power cycling Dimensions in mm (1 mm = 0.0394") Mounting torque (M4) Terminal connection torque (M4) Weight Symbol IR VF VT0 rT RthJC RthJK typ. Conditions VR = VRRM; VR = VRRM; IF = 150 A; TVJ = 25C TVJ = TVJM TVJ = 25C Characteristic Values 0.3 5.0 2.2 0.85 12 2.8 0.7 3.4 0.85 mA mA V V m K/W K/W K/W K/W For power-loss calculations only TVJ = TVJM per per per per diode; DC current module diode; DC current module Data according to IEC 60747 refer to a single diode unless otherwise stated. 420 IXYS reserves the right to change limits, test conditions and dimensions. (c) 2004 IXYS All rights reserved 1-2 VBO 30 3 200 [A] 1:TVJ= 150C 2:TVJ= 25C 150 I F(OV) -----I FSM 10 IFSM (A) TVJ=45C TVJ=150C 360 2 As 1.6 400 T VJ=45C 1.4 TVJ=1 50C 1.2 100 1 0 VRRM 50 IF 0 1.0 1.5 2.0 VF[V] 2.5 3.0 1 2 0.8 1/2 V RRM 0.6 1 VRRM 0.4 100 101 t[ms] 102 103 10 2 1 2 4 t [ms ] 6 10 Fig. 1 Forward current versus voltage drop per diode [W ] 80 Fig. 2 Surge overload current per diode IFSM: Crest value. t: duration TC 50 55 60 65 70 75 80 85 90 95 100 105 Fig. 3 i2dt versus time (1-10ms) per diode or thyristor 40 [A] DC sin.180 rec.120 rec.60 rec.30 PSB 35 0.29 0.01 0.57 = RTHCA [K/W] 30 60 1.12 20 40 DC si n .1 8 0 re c .1 2 0 r e c. 60 r e c. 30 10 IF AV M 30 0 [A ] 2.23 110 115 120 20 5.57 125 130 135 140 145 10 P V TO T 0 I dAV 0 50 100 T (C) C 150 200 C 150 50 Tamb 100 [K ] 15 0 Fig. 4 Power dissipation versus direct output current and ambient temperature 5 K/W Fig.5 Maximum forward current at case temperature 4 3 Z thJC Z thJK 2 1 Z th 0.01 0.1 t[s] 1 10 Fig. 6 Transient thermal impedance per diode or thyristor, calculated IXYS reserves the right to change limits, test conditions and dimensions. 420 2-2 (c) 2004 IXYS All rights reserved |
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